Thermal performance investigation of silicon insulated gate bipolar transistors

Our research group is investigating the thermal performance of silicon insulated gate bipolar transistor and silicon carbide MOSFETs. Thermal imaging, reliability, efficiency performance and real time implementation of developed designs with DSPACE are main studies. Device under test were practically implemented by researchers and tested via high performance systems for efficiency as well as thermal imaging using IR camera.

Thermal performance investigation of silicon insulated gate bipolar transistors